2N3581 Datasheet and Replacement
Type Designator: 2N3581
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO46
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2N3581 Datasheet (PDF)
2n3583 2n3584 2n3585.pdf

2N35832N3584www.centralsemi.com2N3585DESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications.MARKING: FULL PART NUMBERTO-66 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N3583 2N3584 2N3585 UNITSCollector-Base Voltage VCBO 250 375 500 VCollector-Emitt
2n3583-2n3584-2n3585.pdf

NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N3583 250VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 4402N3583 175VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf

ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: ECG185 | DTC124EEB | 2N2904 | ECG332 | 2N5784 | 2SA1488 | NXP3875G
Keywords - 2N3581 transistor datasheet
2N3581 cross reference
2N3581 equivalent finder
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History: ECG185 | DTC124EEB | 2N2904 | ECG332 | 2N5784 | 2SA1488 | NXP3875G



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