2N3581 Specs and Replacement
Type Designator: 2N3581
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO46
2N3581 Substitution
2N3581 datasheet
2n3583 2n3584 2n3585.pdf
2N3583 2N3584 www.centralsemi.com 2N3585 DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL 2N3583 2N3584 2N3585 UNITS Collector-Base Voltage VCBO 250 375 500 V Collector-Emitt... See More ⇒
2n3583-2n3584-2n3585.pdf
NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3583 250 VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 440 2N3583 175 VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3... See More ⇒
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf
A Boca Semiconductor Corp. http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com ... See More ⇒
Detailed specifications: 2N3571 , 2N3572 , 2N3576 , 2N3577 , 2N3579 , 2N357A , 2N358 , 2N3580 , 8550 , 2N3582 , 2N3583 , 2N3584 , 2N3584X , 2N3585 , 2N3586 , 2N3587 , 2N3588 .
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