ESM2012DV Datasheet and Replacement

   Type Designator: ESM2012DV
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 120 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 1200
   Noise Figure, dB: -
   Package: ISOTOP
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