ESM2012DV Datasheet, Equivalent, Cross Reference Search
Type Designator: ESM2012DV
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 120 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1200
Noise Figure, dB: -
Package: ISOTOP
ESM2012DV Transistor Equivalent Substitute - Cross-Reference Search
ESM2012DV Datasheet (PDF)
7.1. Size:117K st
esm2012.pdf
esm2012.pdf
ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
