ESM2012DV Specs and Replacement
Type Designator: ESM2012DV
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 120 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 1200
Package: ISOTOP
ESM2012DV Substitution
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ESM2012DV datasheet
ESM2012DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS ... See More ⇒
Detailed specifications: ESM16, ESM160, ESM161, ESM162, ESM16A, ESM16B, ESM18, ESM191, A733, ESM2030DV, ESM2040D, ESM2060, ESM2060T, ESM2070D, ESM213, ESM214, ESM217
Keywords - ESM2012DV pdf specs
ESM2012DV cross reference
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History: ESM2060
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