ETP2008 Datasheet and Replacement

   Type Designator: ETP2008
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 175 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO5
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