F107 Specs and Replacement

Type Designator: F107

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO62

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F107 datasheet

 0.1. Size:59K  philips

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F107

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor 1998 Mar 06 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical PMBF107 D-MOS transistor FEATURES PINNING - SOT23 Direct interface to C... See More ⇒

Detailed specifications: EW723, EWQ282, F101, F102, F103, F104, F105, F106, 13005, F108, F109, F110, F111, F112, F113, F114, F115

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