F107 Datasheet, Equivalent, Cross Reference Search
Type Designator: F107
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO62
F107 Transistor Equivalent Substitute - Cross-Reference Search
F107 Datasheet (PDF)
0.1. Size:59K philips
pmbf107 3.pdf
pmbf107 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBF107N-channel enhancement modevertical D-MOS transistor1998 Mar 06Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalPMBF107D-MOS transistorFEATURES PINNING - SOT23 Direct interface to C
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
