All Transistors. F112 Datasheet

 

F112 Datasheet and Replacement


   Type Designator: F112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO53
 

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F112 Datasheet (PDF)

 0.1. Size:621K  silikron
 ssf1122d.pdf pdf_icon

F112

SSF1122D Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122D is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device re

 0.2. Size:621K  silikron
 ssf1122.pdf pdf_icon

F112

SSF1122 Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reli

Datasheet: F104 , F105 , F106 , F107 , F108 , F109 , F110 , F111 , D965 , F113 , F114 , F115 , F116 , F117 , F117A , F118 , F118A .

History: BC54PA | ECG214 | KSH13003 | 2SB537 | BD266A | F110 | 2SC441

Keywords - F112 transistor datasheet

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