F112 Specs and Replacement

Type Designator: F112

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO53

 F112 Substitution

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F112 datasheet

 0.1. Size:621K  silikron

 ssf1122d.pdf pdf_icon

F112

SSF1122D Feathers ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20m Typ. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1122D is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device re... See More ⇒

 0.2. Size:621K  silikron

 ssf1122.pdf pdf_icon

F112

SSF1122 Feathers ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20m Typ High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1122 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reli... See More ⇒

Detailed specifications: F104, F105, F106, F107, F108, F109, F110, F111, NJW0281G, F113, F114, F115, F116, F117, F117A, F118, F118A

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