All Transistors. F112 Datasheet

 

F112 Datasheet and Replacement


   Type Designator: F112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO53
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F112 Datasheet (PDF)

 0.1. Size:621K  silikron
 ssf1122d.pdf pdf_icon

F112

SSF1122D Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122D is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device re

 0.2. Size:621K  silikron
 ssf1122.pdf pdf_icon

F112

SSF1122 Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reli

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC101A | 2SB1188SQ-R | KSC5029 | DTA144WET1G | TEC9014C | 3DF5 | D29E1

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