F113 Specs and Replacement

Type Designator: F113

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO53

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F113 datasheet

 0.1. Size:225K  panasonic

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F113

This product complies with the RoHS Directive (EU 2002/95/EC). DRAF113Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF113Z DRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Pac... See More ⇒

Detailed specifications: F105, F106, F107, F108, F109, F110, F111, F112, D965, F114, F115, F116, F117, F117A, F118, F118A, F119

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