All Transistors. F113 Datasheet

 

F113 Datasheet and Replacement


   Type Designator: F113
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO53
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F113 Datasheet (PDF)

 0.1. Size:225K  panasonic
 draf113z.pdf pdf_icon

F113

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF113ZDRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA1051A | 2SD2440 | 2SB464 | MMBT4122 | NKT106 | 2SA843 | 2N1963

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