F113 Datasheet, Equivalent, Cross Reference Search
Type Designator: F113
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO53
F113 Transistor Equivalent Substitute - Cross-Reference Search
F113 Datasheet (PDF)
0.1. Size:225K panasonic
draf113z.pdf
draf113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF113ZDRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
