F119 Datasheet and Replacement
Type Designator: F119
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
F119 Substitution
F119 Datasheet (PDF)
cep1195 ceb1195 cef1195.pdf

CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)
sf016 sf018 sf116 sf117 sf118 sf119 sf121 sf123 sf126 sf127 sf128 sf129 sf131 sf132 sf136 sf137 sf150 sf215 sf216 sf225 sf235 sf240 sf245.pdf

Datasheet: F113 , F114 , F115 , F116 , F117 , F117A , F118 , F118A , BC549 , F119A , F120 , F120A , F121 , F121A , F122 , F122A , F123 .
History: BFY56
Keywords - F119 transistor datasheet
F119 cross reference
F119 equivalent finder
F119 lookup
F119 substitution
F119 replacement
History: BFY56



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