All Transistors. F119 Datasheet

 

F119 Datasheet and Replacement


   Type Designator: F119
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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F119 Datasheet (PDF)

 0.1. Size:432K  cet
 cep1195 ceb1195 cef1195.pdf pdf_icon

F119

CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

 0.2. Size:314K  gdr
 sf016 sf018 sf116 sf117 sf118 sf119.pdf pdf_icon

F119

 0.3. Size:123K  gdr
 sf016 sf018 sf116 sf117 sf118 sf119 sf121 sf123 sf126 sf127 sf128 sf129 sf131 sf132 sf136 sf137 sf150 sf215 sf216 sf225 sf235 sf240 sf245.pdf pdf_icon

F119

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D29E2 | BDS28A | KTB2510 | LBC807-40DMT1G | 2SA3802 | PMC4106 | ECG2345

Keywords - F119 transistor datasheet

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