F119 Specs and Replacement

Type Designator: F119

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

 F119 Substitution

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F119 datasheet

 0.1. Size:432K  cet

 cep1195 ceb1195 cef1195.pdf pdf_icon

F119

CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP1195 900V 2.75 5A 10V CEB1195 900V 2.75 5A 10V CEF1195 900V 2.75 5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) ... See More ⇒

 0.2. Size:314K  gdr

 sf016 sf018 sf116 sf117 sf118 sf119.pdf pdf_icon

F119

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 0.3. Size:123K  gdr

 sf016 sf018 sf116 sf117 sf118 sf119 sf121 sf123 sf126 sf127 sf128 sf129 sf131 sf132 sf136 sf137 sf150 sf215 sf216 sf225 sf235 sf240 sf245.pdf pdf_icon

F119

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Detailed specifications: F113, F114, F115, F116, F117, F117A, F118, F118A, 2SD669, F119A, F120, F120A, F121, F121A, F122, F122A, F123

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