2N3634 Datasheet and Replacement
Type Designator: 2N3634
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO5
2N3634 Datasheet (PDF)
2n3634 2n3635.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3634 2n3635 2n3636 2n3637.pdf

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com
2n3634csm.pdf

2N3634CSMMECHANICAL DATAPNP SILICON TRANSISTOR IN ADimensions in mm (inches)HERMETICALLY SEALED CERAMICSURFACE MOUNT PACKAGE FOR0.51 0.10(0.02 0.004) 0.31 HIGH RELIABILITY APPLICATIONSrad.(0.012)3FEATURES21 High Voltage Switching1.91 0.10 Low Power Amplifier Applications(0.075 0.004)A0.31rad. Hermetic Ceramic Surface Mount(0.012)3.
2n3634l.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637LJANSP 30K Rads (Si)
Datasheet: 2N3626 , 2N3627 , 2N3628 , 2N3629 , 2N363 , 2N3630 , 2N3632 , 2N3633 , A1941 , 2N3634S , 2N3635 , 2N3635S , 2N3636 , 2N3636S , 2N3637 , 2N3637S , 2N3638 .
History: 2SA1292
Keywords - 2N3634 transistor datasheet
2N3634 cross reference
2N3634 equivalent finder
2N3634 lookup
2N3634 substitution
2N3634 replacement
History: 2SA1292



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