FA1A4M Datasheet, Equivalent, Cross Reference Search

   Type Designator: FA1A4M
   SMD Transistor Code: L33
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SOT23

FA1A4M Transistor Equivalent Substitute - Cross-Reference Search

FA1A4M Datasheet (PDF)

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fa1a4m.pdf

DATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI MOLDPACKAGE DIMENSIONSFEATURESin millimeters Resistors Built-in TYPE2.80.2C1.5 0.65+0.10.15BR12R2E31 Complementary to FN1A4MABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Voltage VCBO 60 VMarkingCollector to Emitter Voltage VCEO

9.1. Size:149K nec
fa1a4z.pdf