FA1A4P Specs and Replacement

Type Designator: FA1A4P

SMD Transistor Code: L34

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SOT23

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FA1A4P datasheet

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FA1A4P

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FA1A4P

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FA1A4P

DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters Resistors Built-in TYPE 2.8 0.2 C 1.5 0.65+0.1 0.15 B R1 2 R2 E 3 1 Complementary to FN1A4M ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 60 V Marking Collector to Emitter Voltage VCEO ... See More ⇒

Detailed specifications: F124, F124A, F2, F3, F4, F5, FA1A3Q, FA1A4M, BDT88, FA1A4Z, FA1F4M, FA1F4N, FA1F4Z, FA1L3M, FA1L3N, FA1L4L, FA1L4M

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