FA1A4P Datasheet, Equivalent, Cross Reference Search
Type Designator: FA1A4P
SMD Transistor Code: L34
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SOT23
FA1A4P Transistor Equivalent Substitute - Cross-Reference Search
FA1A4P Datasheet (PDF)
fa1a4m.pdf
DATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI MOLDPACKAGE DIMENSIONSFEATURESin millimeters Resistors Built-in TYPE2.80.2C1.5 0.65+0.10.15BR12R2E31 Complementary to FN1A4MABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Voltage VCBO 60 VMarkingCollector to Emitter Voltage VCEO
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC588
