FC112 Specs and Replacement

Type Designator: FC112

SMD Transistor Code: 112

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT223

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FC112 datasheet

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FC112

Ordering number EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions On-chip bias resistors (R1=22k , R2=22k ) unit mm Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC112] ing efficiency greatly. The FC112 is formed with two chips, being equiva-... See More ⇒

Detailed specifications: FC100M, FC105, FC106, FC107, FC108, FC109, FC110, FC111, TIP31C, FC113, FC114, FC115, FC116, FC119, FC120, FC156, FC157

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