FC119 Specs and Replacement

Type Designator: FC119

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 320 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SO6

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FC119 datasheet

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FC119

Ordering number EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC119] The FC119 is formed with two chips, being equiva- lent to the 2SC... See More ⇒

Detailed specifications: FC109, FC110, FC111, FC112, FC113, FC114, FC115, FC116, 2SC2073, FC120, FC156, FC157, FCS6208, FCS6209, FCS9010, FCS9011D, FCS9011E

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