FC120 Specs and Replacement

Type Designator: FC120

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 750 MHz

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SO6

 FC120 Substitution

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FC120 datasheet

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FC120

Ordering number EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC120] The FC120 is formed with two chips, being equiva- lent ... See More ⇒

Detailed specifications: FC110, FC111, FC112, FC113, FC114, FC115, FC116, FC119, S9014, FC156, FC157, FCS6208, FCS6209, FCS9010, FCS9011D, FCS9011E, FCS9011F

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