FC120 Datasheet, Equivalent, Cross Reference Search
Type Designator: FC120
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 750 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SO6
FC120 Transistor Equivalent Substitute - Cross-Reference Search
FC120 Datasheet (PDF)
..1. Size:201K sanyo
fc120.pdf
fc120.pdf
Ordering number:EN3062AFC120NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency General-Purpose Amp, Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2068ing efficiency greatly.[FC120] The FC120 is formed with two chips, being equiva-lent
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
