FC156 Specs and Replacement

Type Designator: FC156

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7000 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SO6

 FC156 Substitution

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FC156 datasheet

 ..1. Size:183K  sanyo

 fc156.pdf pdf_icon

FC156

Ordering number EN5432 FC156 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the CP unit mm package currently in use, improving the mounting 2104A efficiency greatly. [FC156] The FC156 is formed with two chips, being equiva- lent to the 2SC... See More ⇒

 0.1. Size:1101K  alfa-mos

 afc1563.pdf pdf_icon

FC156

AFC1563 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC1563, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/1.0A,RDS(ON)=280m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m @VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m @VGS=... See More ⇒

Detailed specifications: FC111, FC112, FC113, FC114, FC115, FC116, FC119, FC120, BC327, FC157, FCS6208, FCS6209, FCS9010, FCS9011D, FCS9011E, FCS9011F, FCS9011G

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