FC156 Datasheet, Equivalent, Cross Reference Search
Type Designator: FC156
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SO6
FC156 Transistor Equivalent Substitute - Cross-Reference Search
FC156 Datasheet (PDF)
fc156.pdf
Ordering number:EN5432FC156NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amp,Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in the CPunit:mmpackage currently in use, improving the mounting2104Aefficiency greatly.[FC156] The FC156 is formed with two chips, being equiva-lent to the 2SC
afc1563.pdf
AFC1563 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC1563, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/1.0A,RDS(ON)=280m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m@VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m@VGS=
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUX84
