2N3636S Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2N3636S Datasheet. Specs and Replacement

Type Designator: 2N3636S 📄📄

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 175 V

Maximum Collector-Emitter Voltage |Vce|: 175 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

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2N3636S datasheet

8.1. Size:219K bocasemi

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Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com ... See More ⇒

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si) ... See More ⇒

8.3. Size:227K microsemi

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