FCX5550 Specs and Replacement
Type Designator: FCX5550
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SOT89
FCX5550 Substitution
- BJT ⓘ Cross-Reference Search
FCX5550 datasheet
A Product Line of Diodes Incorporated FCX555 Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Limit Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEV -180 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -0.7 A Peak Pulse Current ICM -2 A Thermal Characteristics (@... See More ⇒
FCX558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -400V Case SOT89 IC = -200mA High Continuous Current Case Material Molded Plastic. Green Molding Compound. ICM = -500mA Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics up to -100mA Moisture Sensitivity Level 1 per J-STD-020 ... See More ⇒
Detailed specifications: FCS9022, FCX2369, FCX2369A, FCX458, FCX491, FCX491A, FCX495, FCX5401, BD136, FCX558, FCX589, FCX591, FCX591A, FCX596, FCX604, FCX649, FCX653
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