FMW4 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMW4
SMD Transistor Code: S4_W4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SC74A
FMW4 Transistor Equivalent Substitute - Cross-Reference Search
FMW4 Datasheet (PDF)
fms4 fmw4 s4 sot23-5.pdf
FMS3 / FMS4 / IMT4TransistorsTransistorsFMW3 / FMW4 / IMX8(94S-389-A41)(94S-398-C41)578
fmw47n60s1hf.pdf
http://www.fujielectric.com/products/semiconductor/FMW47N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)
fmw3-fmw4.pdf
FMW3/FMW4 Dual TransistorSOT-23-5LFeatures High breakdown voltage 2 .8 20Dimensions in millimeters3. 020 0MAXIMUM RATINGS (TA=25 unless otherwise noted) 0 .3 0080. 500Symbol Parameter Value Units0 .3 00VCBO Collector- Base Voltage 120 V 0. 6002. 6502 .950 1 .5 00VCEO Collector-Emitter Voltage 120 V 1. 700VEBO Emitter-Base Voltage 5 V IC Colle
fmw47n60s1hf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMW47N60S1HFFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: FMS1A , FMS2A , FMS3 , FMS4 , FMW1 , FMW10 , FMW2 , FMW3 , TIP2955 , FMW6 , FMW7 , FMW8 , FMY1A , FMY3A , FMY4A , FMY5 , FMY6 .
History: CDL13005R
