FT45 Specs and Replacement

Type Designator: FT45

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 425 MHz

Collector Capacitance (Cc): 0.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO72

 FT45 Substitution

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FT45 datasheet

 0.1. Size:52K  philips

 bft45 cnv 2.pdf pdf_icon

FT45

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFT45 PNP high-voltage transistor 1997 Apr 18 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistor BFT45 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION High voltage (max. 250 V). 1 emitter 2 base APPL... See More ⇒

Detailed specifications: FT417A, FT417B, FT423, FT430, FT431, FT4354, FT4355, FT4356, D880, FT47, FT48, FT49, FT50, FT5040, FT5041, FT5415, FT5722R

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