FX4207 Specs and Replacement
Type Designator: FX4207
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
FX4207 Substitution
- BJT ⓘ Cross-Reference Search
FX4207 datasheet
Advance Technical Information GigaMOSTM Trench VDSS = 100V IXFK420N10T HiperFETTM ID25 = 420A IXFX420N10T RDS(on) 2.6m Power MOSFET trr 140ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 100 V TAB D S VDGR TJ = 25 C ... See More ⇒
isc N-Channel MOSFET Transistor IXFX420N10T FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V G... See More ⇒
Detailed specifications: FX3724, FX3725, FX3962, FX3963, FX3964, FX3965, FX4046, FX4047, TIP42C, FX4960, FX4964, FX4965, FX5127, FX5128, FX5129, FX5130, FX5131
Keywords - FX4207 pdf specs
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History: NB311Z
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