GC101 Datasheet. Specs and Replacement
Type Designator: GC101
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Package: TO1
GC101 Substitution
- BJT ⓘ Cross-Reference Search
GC101 datasheet
SIGC101T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Paramete... See More ⇒
SIGC101T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Parameters ... See More ⇒
Detailed specifications: GBD179, GBD189, GBD190, GBD266, GBD267, GBD645, GBD646, GC100, 13007, GC102, GC103, GC104, GC111, GC112, GC115, GC116, GC117
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