GC101 Datasheet, Equivalent, Cross Reference Search
Type Designator: GC101
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 90 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
Package: TO1
GC101 Transistor Equivalent Substitute - Cross-Reference Search
GC101 Datasheet (PDF)
sigc101t170r3e.pdf
SIGC101T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Paramete
sigc101t170r3.pdf
SIGC101T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Parameters
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
