All Transistors. GC189 Datasheet

 

GC189 Datasheet and Replacement


   Type Designator: GC189
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: TO92
 

 GC189 Substitution

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GC189 Datasheet (PDF)

 0.1. Size:82K  infineon
 igc189t120t6rl.pdf pdf_icon

GC189

IGC189T120T6RL IGBT4 Low Power Chip Features: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC189T120T6RL 1200V 200A 13.62 x 13.87 mm2 sawn on foil MECH

 0.2. Size:70K  infineon
 igc189t120t8rl.pdf pdf_icon

GC189

IGC189T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC189T120T8RL 1200V

Datasheet: GC117 , GC118 , GC120 , GC121 , GC122 , GC123 , GC181 , GC181A , BC327 , GC195 , GC197 , GC198 , GC214 , GC216 , GC217 , GC221 , GC223 .

History: BUW11AW | HEPS0012 | CTP1034 | 3DG718A | NSVMUN5312DW1T2G | NESG270034 | NTE103A

Keywords - GC189 transistor datasheet

 GC189 cross reference
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