GC189 Datasheet. Specs and Replacement
Type Designator: GC189
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Package: TO92
GC189 Substitution
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GC189 datasheet
IGC189T120T6RL IGBT4 Low Power Chip Features 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC189T120T6RL 1200V 200A 13.62 x 13.87 mm2 sawn on foil MECH... See More ⇒
IGC189T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC189T120T8RL 1200V ... See More ⇒
Detailed specifications: GC117, GC118, GC120, GC121, GC122, GC123, GC181, GC181A, BC327, GC195, GC197, GC198, GC214, GC216, GC217, GC221, GC223
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