All Transistors. GC223B Datasheet

 

GC223B Datasheet and Replacement


   Type Designator: GC223B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
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GC223B Datasheet (PDF)

 9.1. Size:63K  infineon
 sigc223t120r2cs.pdf pdf_icon

GC223B

SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology 175m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant E integrated gate resistor applications Chip Type VCE ICn Die Size Package Ordering

 9.2. Size:120K  infineon
 sigc223t120r2cl.pdf pdf_icon

GC223B

SIGC223T120R2CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology IGBT-Modules 180m chipBSM150GB120DLC short circuit prove positive temperature coefficient GApplications: easy parallelingE drivesChip Type VCE ICn Die Size Package Ordering CodeQ67050-A4286-SIGC223T120R2CL 1200V 150A 14.4 x 15.5 mm2

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KT608A | 2SB1188SQ-R | 2SC3246 | 3DF5 | S1238 | DTA144WET1G | 2N2450

Keywords - GC223B transistor datasheet

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