GC223B Datasheet. Specs and Replacement
Type Designator: GC223B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO92
GC223B Substitution
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GC223B datasheet
SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES This chip is used for C 1200V NPT technology 175 m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications easy paralleling G drives, SMPS, resonant E integrated gate resistor applications Chip Type VCE ICn Die Size Package Ordering ... See More ⇒
SIGC223T120R2CL IGBT Chip in NPT-technology C FEATURES This chip is used for 1200V NPT technology IGBT-Modules 180 m chip BSM150GB120DLC short circuit prove positive temperature coefficient G Applications easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4286- SIGC223T120R2CL 1200V 150A 14.4 x 15.5 mm2 ... See More ⇒
Detailed specifications: GC197, GC198, GC214, GC216, GC217, GC221, GC223, GC223A, BC546, GC237, GC238, GC239, GC269, GC300, GC300A, GC300B, GC300C
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