GD125 Datasheet and Replacement

   Type Designator: GD125
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 66 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
     - BJT ⓘ Cross-Reference Search