All Transistors. GD175A Datasheet

 

GD175A Datasheet and Replacement


   Type Designator: GD175A
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 5.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

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GD175A Datasheet (PDF)

 9.1. Size:888K  nxp
 pmgd175xn.pdf pdf_icon

GD175A

PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications

 9.2. Size:327K  gdr
 gd160 gd170 gd175 gd180 gd240 gd241 gd242 gd243 gd244.pdf pdf_icon

GD175A

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BU103AD | GE6251 | NST3946DXV6T5G | NSS35200CF8T1G | KT3187A-9 | MMDT4146 | NSBC114YPDP6T5G

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