GD175B Datasheet, Equivalent, Cross Reference Search
Type Designator: GD175B
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
GD175B Transistor Equivalent Substitute - Cross-Reference Search
GD175B Datasheet (PDF)
9.1. Size:888K nxp
pmgd175xn.pdf
pmgd175xn.pdf
PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
