All Transistors. GD175B Datasheet

 

GD175B Datasheet and Replacement


   Type Designator: GD175B
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 5.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
 

 GD175B Substitution

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GD175B Datasheet (PDF)

 9.1. Size:888K  nxp
 pmgd175xn.pdf pdf_icon

GD175B

PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications

 9.2. Size:327K  gdr
 gd160 gd170 gd175 gd180 gd240 gd241 gd242 gd243 gd244.pdf pdf_icon

GD175B

Datasheet: GD160B , GD160C , GD170 , GD170A , GD170B , GD170C , GD175 , GD175A , 13009 , GD175C , GD180 , GD180A , GD180B , GD180C , GD183 , GD190 , GD191 .

History: BC546ABK

Keywords - GD175B transistor datasheet

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