GD190 Datasheet. Specs and Replacement

Type Designator: GD190

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3

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GD190 datasheet

 0.1. Size:827K  cn hunteck

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GD190

HGD190N15SL P-1 150V N-Ch Power MOSFET 150 V VDS Feature 16.0 RDS(on),typ VGS=10V m Optimized for high speed smooth 19 RDS(on),typ VGS=4.5V m switching,Logic level 69 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Drain Hard Switching and H... See More ⇒

Detailed specifications: GD175A, GD175B, GD175C, GD180, GD180A, GD180B, GD180C, GD183, TIP31C, GD191, GD192, GD200, GD203, GD207, GD210, GD220, GD240

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