GD190 Datasheet and Replacement
Type Designator: GD190
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
GD190 Substitution
GD190 Datasheet (PDF)
hgd190n15sl.pdf

HGD190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H
Datasheet: GD175A , GD175B , GD175C , GD180 , GD180A , GD180B , GD180C , GD183 , 100DA025D , GD191 , GD192 , GD200 , GD203 , GD207 , GD210 , GD220 , GD240 .
History: 2SD669AM-A | BUH315DXI
Keywords - GD190 transistor datasheet
GD190 cross reference
GD190 equivalent finder
GD190 lookup
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History: 2SD669AM-A | BUH315DXI



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