GE10003 Datasheet. Specs and Replacement

Type Designator: GE10003  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 325 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

  📄📄 Copy 

 GE10003 Substitution

- BJT ⓘ Cross-Reference Search

 

GE10003 datasheet

NO PDF data!

Detailed specifications: GD608, GD609, GD617, GD618, GD619, GE10000, GE10001, GE10002, C3198, GE10004, GE10005, GE10006, GE10007, GE10008, GE10009, GE10015, GE10016

Keywords - GE10003 pdf specs

 GE10003 cross reference

 GE10003 equivalent finder

 GE10003 pdf lookup

 GE10003 substitution

 GE10003 replacement