GES5819 Datasheet. Specs and Replacement
Type Designator: GES5819 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO92
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GES5819 datasheet
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Detailed specifications: GES5811, GES5812, GES5813, GES5814, GES5815, GES5816, GES5817, GES5818, 2N5551, GES5820, GES5822, GES5823, GES5824, GES5825, GES5826, GES5827, GES5827A
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History: BFX10 | TPCP8507
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