GF135 Specs and Replacement
Type Designator: GF135
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO72
GF135 Substitution
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GF135 datasheet
Product Data Sheet February 1, 2002 Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-Gold Metallization for High Reliability Recessed Gate Structure 0.620 x 0.514 x 0.102 mm (0.024 x 0.020 x 0.004 in.) Description T... See More ⇒
Detailed specifications: GF126, GF127, GF128, GF129, GF130, GF131, GF132, GF133, 9014, GF136, GF137, GF138, GF139, GF140, GF141, GF142, GF143
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