GF135 Datasheet, Equivalent, Cross Reference Search
Type Designator: GF135
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO72
GF135 Transistor Equivalent Substitute - Cross-Reference Search
GF135 Datasheet (PDF)
0.1. Size:115K triquint
tgf1350-scc.pdf
tgf1350-scc.pdf
Product Data SheetFebruary 1, 2002Discrete MESFET TGF1350-SCCKey Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB AssociatedGain at 10 GHz 2.5 dB Noise Figure with 7 dB AssociatedGain at 18 GHz All-Gold Metallization for High Reliability Recessed Gate Structure 0.620 x 0.514 x 0.102 mm (0.024 x 0.020 x0.004 in.)DescriptionT
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
