GS110 Datasheet and Replacement
Type Designator: GS110
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.083 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
GS110 Substitution
GS110 Datasheet (PDF)
hgs110n08al.pdf

HGS110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS
hgs110n08a.pdf

HGS110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8Gat
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
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