GS110 Specs and Replacement

Type Designator: GS110

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.083 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO39

 GS110 Substitution

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GS110 datasheet

 0.1. Size:908K  cn hunteck

 hgs110n08al.pdf pdf_icon

GS110

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 0.2. Size:903K  cn hunteck

 hgs110n08a.pdf pdf_icon

GS110

HGS110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 12 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 Gat... See More ⇒

Detailed specifications: GP140, GP145, GS100B, GS100C, GS100D, GS109B, GS109C, GS109D, 2SC5200, GS111B, GS111C, GS111D, GS111E, GS112B, GS112C, GS112D, GS112E

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