GS110 Datasheet, Equivalent, Cross Reference Search
Type Designator: GS110
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.083 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
GS110 Transistor Equivalent Substitute - Cross-Reference Search
GS110 Datasheet (PDF)
hgs110n08al.pdf
HGS110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS
hgs110n08a.pdf
HGS110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8Gat
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .