GS2012 Specs and Replacement
Type Designator: GS2012
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO202
GS2012 Substitution
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GS2012 datasheet
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Detailed specifications: GS112B, GS112C, GS112D, GS112E, GS121B, GS121C, GS121D, GS122, BC337, GS2013, GS2014, GS2017, GS2017A, GS2052, GS8050T, GS8550T, GS9010
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