GSRU10035 Specs and Replacement
Type Designator: GSRU10035
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
GSRU10035 Substitution
- BJT ⓘ Cross-Reference Search
GSRU10035 datasheet
isc Silicon NPN Power Transistor GSRU15040 DESCRIPTION High DC Current Gain- h = 10(MIN)@I = 15A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Supplies Switching Amplifiers Inverters/Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
Detailed specifications: GSH9012F, GSH9032, GSH9032D, GSH9032E, GSH9033, GSH9033D, GSH9033E, GSRU10030, D667, GSRU10040, GSRU15030, GSRU15030A, GSRU15035, GSRU15035A, GSRU15040, GSRU15040A, GSRU20030
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