GT125E Datasheet. Specs and Replacement

Type Designator: GT125E  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

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GT125E datasheet

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GT125E

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 9.2. Size:3940K  goford

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GT125E

GT125N10 GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON) technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.) charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130 A 4.1m to get better ruggedness and suitable to use in motor control applications. Applications Features Consu... See More ⇒

Detailed specifications: GT122V, GT124A, GT124B, GT124G, GT124V, GT125A, GT125B, GT125D, 13005, GT125G, GT125I, GT125J, GT125K, GT125L, GT125V, GT150-10, GT150-3

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