All Transistors. GT125V Datasheet

 

GT125V Datasheet and Replacement


   Type Designator: GT125V
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 71
   Noise Figure, dB: -
 

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GT125V Datasheet (PDF)

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GT125V

 9.2. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf pdf_icon

GT125V

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

Datasheet: GT125B , GT125D , GT125E , GT125G , GT125I , GT125J , GT125K , GT125L , NJW0281G , GT150-10 , GT150-3 , GT150-4 , GT150-5 , GT150-6 , GT150-7 , GT150-8 , GT150-9 .

History: PMP5501V | 2N3806DCSM | HEPS0005 | TBC846 | S1840 | MUN2230LT2 | 2N2509

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