All Transistors. GT125V Datasheet

 

GT125V Datasheet and Replacement


   Type Designator: GT125V
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 71
   Noise Figure, dB: -
 

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GT125V Datasheet (PDF)

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf pdf_icon

GT125V

 9.2. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf pdf_icon

GT125V

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SB1366F-O | GSTMMBT3904 | PTB20165 | PVR100AZ-B5V0 | PTB20173 | 2SB1359 | 2SD2114

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