GT806B Datasheet. Specs and Replacement
Type Designator: GT806B 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
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GT806B datasheet
Detailed specifications: GT8002, GT8003, GT8004, GT8005, GT804A, GT804B, GT804V, GT806A, 2SC1815, GT806D, GT806G, GT806V, GT81, GT8100, GT8101, GT8102, GT8103
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BJT Parameters and How They Relate
History: BFW66 | 2N3834 | 2N6379 | MUN2135 | ERS180 | 2SA1980E | BC308C
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