GT8100 Datasheet. Specs and Replacement

Type Designator: GT8100  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

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GT8100 datasheet

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GT8100

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Detailed specifications: GT804B, GT804V, GT806A, GT806B, GT806D, GT806G, GT806V, GT81, BC546, GT8101, GT8102, GT8103, GT810A, GT811, GT812, GT813A, GT813B

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