GT8100 Datasheet and Replacement

   Type Designator: GT8100
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3
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