GT8102 Datasheet and Replacement
Type Designator: GT8102
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
GT8102 Substitution
GT8102 Datasheet (PDF)
Datasheet: GT806A , GT806B , GT806D , GT806G , GT806V , GT81 , GT8100 , GT8101 , BD135 , GT8103 , GT810A , GT811 , GT812 , GT813A , GT813B , GT813V , GT81H .
Keywords - GT8102 transistor datasheet
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