GT8102 Datasheet and Replacement

   Type Designator: GT8102
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search