GT812 Datasheet. Specs and Replacement

Type Designator: GT812  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO220

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GT812 datasheet

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Detailed specifications: GT806V, GT81, GT8100, GT8101, GT8102, GT8103, GT810A, GT811, TIP127, GT813A, GT813B, GT813V, GT81H, GT81HS, GT82, GT83, GT87

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