All Transistors. HEPG0009 Equivalents Search

 

HEPG0009 Specs and Replacement


   Type Designator: HEPG0009
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 24 V
   Maximum Collector Current |Ic max|: 0.35 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO18
 

 HEPG0009 Substitution

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HEPG0009 detailed specifications

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Detailed specifications: HEP637 , HEPG0001 , HEPG0002 , HEPG0003 , HEPG0005 , HEPG0006 , HEPG0007 , HEPG0008 , D667 , HEPG0011 , HEPS0005 , HEPS0008 , HEPS0009 , HEPS0010 , HEPS0011 , HEPS0012 , HEPS0013 .

Keywords - HEPG0009 transistor specs

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