HEPS5012 Datasheet. Specs and Replacement

Type Designator: HEPS5012  πŸ“„πŸ“„ 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 Β°C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO66

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HEPS5012 datasheet

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Detailed specifications: HEPS3055, HEPS3060, HEPS3061, HEPS5000, HEPS5004, HEPS5005, HEPS5006, HEPS5011, 9014, HEPS5013, HEPS5014, HEPS5015, HEPS5018, HEPS5019, HEPS5020, HEPS5021, HEPS5022

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