2N3816 Datasheet. Specs and Replacement

Type Designator: 2N3816  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: 610A-03

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2N3816 datasheet

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2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 ... See More ⇒

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2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v 8 25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise 3 dB @ 400 MHz D High Quality of Amplification D Sample-a... See More ⇒

Detailed specifications: 2N3811, 2N3811A, 2N3811ADCSM, 2N3811DCSM, 2N3812, 2N3813, 2N3814, 2N3815, 8050, 2N3816A, 2N3817, 2N3817A, 2N3818, 2N382, 2N3825, 2N3826, 2N3827

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