HNT1T018 Specs and Replacement
Type Designator: HNT1T018
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO18
HNT1T018 Transistor Equivalent Substitute - Cross-Reference Search
HNT1T018 detailed specifications
NO specs!
Detailed specifications: HEPS9152 , HEPS9153 , HF0100 , HF100 , HF200 , HF8004 , HK100 , HL100 , 2N3055 , HNT1T05 , HPA100R , HPA100R-2 , HPA100R-3 , HPA100R-4 , HPA150R , HPA150R-2 , HPA150R-3 .
History: HNT1T05
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