HSE825 Specs and Replacement
Type Designator: HSE825
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
HSE825 Transistor Equivalent Substitute - Cross-Reference Search
HSE825 detailed specifications
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Detailed specifications: HSE453 , HSE454 , HSE455 , HSE456 , HSE459 , HSE640 , HSE820 , HSE823 , D209L , HSE828 , HSE829 , HSE830 , HSE833 , HSE834 , HSE838 , HSE839 , HSE901 .
History: BC341-6
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