IDB676 Specs and Replacement
Type Designator: IDB676
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO220
IDB676 Substitution
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IDB676 datasheet
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Detailed specifications: IDB1023, IDB1024, IDB434, IDB435, IDB553, IDB595, IDB596, IDB674, BD140, IDB677, IDC2073, IDC2238, IDC2238A, IDC2238B, IDC2555, IDC2562, IDC2706
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