2N3841 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3841
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1.5 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO18
2N3841 Transistor Equivalent Substitute - Cross-Reference Search
2N3841 Datasheet (PDF)
9.2. Size:67K microsemi
2n3846 2n3847.pdf
2n3846 2n3847.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level JAN 2N3846 2N3847 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3846 2N3847 Units Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 300 400 Vdc VCBO Emitter-Base Voltage 10 Vdc VEBO Collector Current 20 Adc IC Total Power Dissipation @ T = +250C (
Datasheet: 2N3834 , 2N3835 , 2N3836 , 2N3837 , 2N3838 , 2N3839 , 2N384 , 2N3840 , B647 , 2N3842 , 2N3842A , 2N3843 , 2N384-33 , 2N3843A , 2N3844 , 2N3844A , 2N3845 .
