IR4010 Specs and Replacement
Type Designator: IR4010
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO3
IR4010 Substitution
- BJT ⓘ Cross-Reference Search
IR4010 datasheet
New Product SiR401DP Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested - 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC 0.0077 at VGS = -... See More ⇒
Detailed specifications: IR2000, IR2002, IR2500, IR2501, IR2700, IR2701, IR3000, IR3001, S9014, IR4025, IR4026, IR4039, IR4040, IR4041, IR4045, IR4046, IR4047
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History: 2N1203 | 2N5026
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