IR4010 Datasheet, Equivalent, Cross Reference Search
Type Designator: IR4010
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO3
IR4010 Transistor Equivalent Substitute - Cross-Reference Search
IR4010 Datasheet (PDF)
9.1. Size:518K vishay
sir401dp.pdf
sir401dp.pdf
New ProductSiR401DPVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested- 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC0.0077 at VGS = -
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: PN5130 | D4515 | BD546D
