All Transistors. IR4010 Datasheet

 

IR4010 Datasheet and Replacement


   Type Designator: IR4010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO3
 

 IR4010 Substitution

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IR4010 Datasheet (PDF)

 9.1. Size:518K  vishay
 sir401dp.pdf pdf_icon

IR4010

New ProductSiR401DPVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested- 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC0.0077 at VGS = -

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DTC023YEB | 2SC1072 | NKT107 | NKT223

Keywords - IR4010 transistor datasheet

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