2N3847 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3847
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO61
2N3847 Transistor Equivalent Substitute - Cross-Reference Search
2N3847 Datasheet (PDF)
..1. Size:67K microsemi
2n3846 2n3847.pdf
2n3846 2n3847.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level JAN 2N3846 2N3847 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3846 2N3847 Units Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 300 400 Vdc VCBO Emitter-Base Voltage 10 Vdc VEBO Collector Current 20 Adc IC Total Power Dissipation @ T = +250C (
Datasheet: 2N3843 , 2N384-33 , 2N3843A , 2N3844 , 2N3844A , 2N3845 , 2N3845A , 2N3846 , MPSA42 , 2N3848 , 2N3849 , 2N385 , 2N3850 , 2N3851 , 2N3852 , 2N3853 , 2N3854 .
