J464 Specs and Replacement
Type Designator: J464
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO22
J464 Substitution
- BJT ⓘ Cross-Reference Search
J464 datasheet
SQJ464EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.017 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.020 Material categorization ID (A) 24 For definitions of compliance please see Configuration Single www... See More ⇒
Detailed specifications: IT2906, IT2907, IT918, J24562, J460, J461, J462, J463, 2N5401, J465, J466, J581, J582, J583, J584, J585, J586
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History: 2SD1452
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