J465 Datasheet. Specs and Replacement

Type Designator: J465  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO22

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J465 datasheet

 0.1. Size:371K  toshiba

 2sj465.pdf pdf_icon

J465

2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 2.5 V gate drive Low drain-source ON resistance R = 0.54 (typ.) DS (ON) High forward transfer admittance Y = 1.7 S (typ.) fs Low leakage current I = -100 A (max) DSS (V = -16 V) DS Enhance... See More ⇒

 0.2. Size:192K  vishay

 sqj465ep.pdf pdf_icon

J465

SQJ465EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.085 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.115 100 % Rg and UIS Tested ID (A) - 8 Compliant to RoHS Directive 200... See More ⇒

Detailed specifications: IT2907, IT918, J24562, J460, J461, J462, J463, J464, 2N3055, J466, J581, J582, J583, J584, J585, J586, J587

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