All Transistors. J581 Datasheet

 

J581 Datasheet and Replacement


   Type Designator: J581
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.675 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO22

 J581 Transistor Equivalent Substitute - Cross-Reference Search

   

J581 Datasheet (PDF)

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J581

PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ581 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ581 is P-Channel DMOS Field Effect Transistor that PART NUMBER PACKAGE features a low on-resistance and excellent switching 2SJ581 MP-10 characteristics, designed for high current switching applications such as DC to DC converter... See More ⇒

Datasheet: J24562 , J460 , J461 , J462 , J463 , J464 , J465 , J466 , TIP41 , J582 , J583 , J584 , J585 , J586 , J587 , J588 , J589 .

History: DTS4067 | MPS1711 | 2N6653 | MPS2222A | IMBT4400 | TP5129 | MPS2221

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