J581 Datasheet, Equivalent, Cross Reference Search
Type Designator: J581
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.675 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO22
J581 Transistor Equivalent Substitute - Cross-Reference Search
J581 Datasheet (PDF)
0.1. Size:37K nec
2sj581.pdf
2sj581.pdf
PRELIMINARY PRODUCT INFORMATIONMOS FIELD EFFECT TRANSISTOR2SJ581SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATIONThe 2SJ581 is P-Channel DMOS Field Effect Transistor thatPART NUMBER PACKAGEfeatures a low on-resistance and excellent switching2SJ581 MP-10characteristics, designed for high current switching applicationssuch as DC to DC converter
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
