J581 Datasheet. Specs and Replacement
Type Designator: J581 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.675 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO22
J581 Substitution
- BJT ⓘ Cross-Reference Search
J581 datasheet
PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ581 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ581 is P-Channel DMOS Field Effect Transistor that PART NUMBER PACKAGE features a low on-resistance and excellent switching 2SJ581 MP-10 characteristics, designed for high current switching applications such as DC to DC converter... See More ⇒
Detailed specifications: J24562, J460, J461, J462, J463, J464, J465, J466, TIP41, J582, J583, J584, J585, J586, J587, J588, J589
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