All Transistors. J581 Datasheet

 

J581 Datasheet and Replacement


   Type Designator: J581
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.675 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO22
 

 J581 Substitution

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J581 Datasheet (PDF)

 0.1. Size:37K  nec
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J581

PRELIMINARY PRODUCT INFORMATIONMOS FIELD EFFECT TRANSISTOR2SJ581SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATIONThe 2SJ581 is P-Channel DMOS Field Effect Transistor thatPART NUMBER PACKAGEfeatures a low on-resistance and excellent switching2SJ581 MP-10characteristics, designed for high current switching applicationssuch as DC to DC converter

Datasheet: J24562 , J460 , J461 , J462 , J463 , J464 , J465 , J466 , A1015 , J582 , J583 , J584 , J585 , J586 , J587 , J588 , J589 .

History: DRA2123Y

Keywords - J581 transistor datasheet

 J581 cross reference
 J581 equivalent finder
 J581 lookup
 J581 substitution
 J581 replacement

 

 
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